室溫液態金屬製備大面積二維氧化鎵和氮化鎵應用於光感測元件

Abstract

摘要 本研究使用液態金屬鎵合成二維氧化鎵和氮化鎵的薄層。有別於傳統製備二維材料的方法，本實驗將液態金屬之特性與聚二甲基矽氧烷（PDMS）轉印法結合，製備出大面積、高清潔度和低殘留的非晶氧化鎵薄膜。分別透過大氣退火製程和氨化處理使非晶 Ga2O3 分別轉變為 𝛽-Ga2O3 和GaN 的薄膜。利用多種分析技術檢測薄膜的表面形貌、元素組成、晶體結構等等。光感測結果顯示，Ga2O3 有較大的光感測電流值，而 GaN 雖表現出較低的光響應特性，但其有較快速的光電流恢復速度，材料有各自的優點可應用在不同領域，皆具有廣闊的前景。本研究為合成二維鎵族半導體提供一種可擴展的方法，具有多種光電應用的潛力。

Abstract This study uses liquid metal to synthesize gallium oxide and nitride by transfer printing method. Different from traditional methods for preparing two-dimensional materials, this experiment combines the unique properties of liquid metal with the polydimethylsiloxane (PDMS) to prepare large-area, high-purity and low-residue amorphous gallium oxide films. By annealing processes, we obtained the crystalline gallium oxide and gallium nitride films and analyzed the material composition, morphology, and crystal structure. The photocurrent revealed that 𝛽-Ga2O3 exhibits better optimal photoresponse performance and gallium nitride exhibits lower photoresponse current values and faster photocurrent recovery time. Materials offer different advantages, making them suitable for different applications and holding significant potential in various fields. This study presents a scalable method to synthesize two-dimensional gallium-based semiconductors for a wide range of optoelectronic applications.