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dc.contributor.author陳妍蓁zh_TW
dc.date112學年度第二學期zh_TW
dc.date.accessioned2024-10-25T08:15:13Z-
dc.date.available2024-10-25T08:15:13Z-
dc.date.submitted2024-10-25-
dc.identifier.otherD1065767zh_TW
dc.identifier.urihttp://dspace.fcu.edu.tw/handle/2376/4962-
dc.description.abstract中文摘要 Mxenes被視為是超級電容器中潛在的電極材料。研究表明可以透過摻雜、缺陷改變電極材料的電子結構,進而改善量子電容。此篇文獻研究摻雜不同的過渡金屬(TM)的MXenes之量子電容,透過理論計算量子電容CQ以及儲存電荷Q,一共13種包含3d、4d、5d的過渡金屬摻雜以及空位摻雜Sc2CF2,分別命名為TM@PS以及VS。研究發現3d TM原子的摻雜可以有效的調節原始Sc2CF2的磁性,並且改進了Sc2CF2基材料的CQ及Q,更進一步的改變電極材料的電極類型。 在水性以及離子/有機系統, PS、VS、Y@PS 、Mn@PS適合當作非對稱超級電容器的陰極材料。而在離子/有機系統中,V@PS、Zr@PS、Nb@PS、Hf@PS、Ta@PS適合作為陽極材料。Fe@PS在水性系統中適合作為對稱超級電容器電極材料,但在離子/有機系統中適合非對稱超級電容器之陰極材料。zh_TW
dc.description.abstractAbstract MXenes are considered potential electrode materials in supercapacitors. Research indicates that modifying the electronic structure of electrode materials through doping and defects can enhance quantum capacitance. This study investigates the quantum capacitance (CQ) and charge storage (Q) of MXenes doped with different transition metals (TM), including 3d, 4d, and 5d TMs, and vacancy-doped Sc2CF2, labeled as TM@PS and VS, respectively. The research finds that doping with 3d transition metal atoms effectively tunes the magnetism of pristine Sc2CF2 and improves its CQ and Q, thereby further altering the electrode type of the material. In aqueous and ion/organic systems, Mn@PS serves as an excellent cathode material, while PS, VS, and Y@PS are suitable as cathode materials for asymmetric supercapacitors. In ion/organic systems, V@PS, Zr@PS, Nb@PS, Hf@PS, and Ta@PS are suitable as anode materials. Fe@PS is suitable as an electrode material for symmetric supercapacitors in aqueous systems but functions as a cathode material for asymmetric supercapacitors in ion/organic systems.zh_TW
dc.description.tableofcontents目錄 1、研究背景與現況…………………………………………………… 1 2、實驗構想…………………………………………………………… 1 3、基本理論…………………………………………………………… 2 4、實驗方法…………………………………………………………… 2 5、結果與討論………………………………………………………… 3 6、本研究的應用潛力與未來發展……………………………………15 7、對本篇論文的觀察與學習心得……………………………………16 8、結論…………………………………………………………………17 9、Q&A 問答集……………………………………………………….17 參考文獻………………………………………………………………..21zh_TW
dc.format.extent25p.zh_TW
dc.language.isozhzh_TW
dc.rightsopenbrowsezh_TW
dc.subject量子電容zh_TW
dc.subject空位摻雜zh_TW
dc.subject過渡金屬摻雜zh_TW
dc.subject密度泛函理論zh_TW
dc.subjectMXene超級電容器zh_TW
dc.subjectDensity Functional Theory (DFT)zh_TW
dc.subjectMXene Supercapacitorszh_TW
dc.subjectQuantum Capacitancezh_TW
dc.subjectTransition-Metal Dopingzh_TW
dc.subjectVacancy Dopingzh_TW
dc.title過渡金屬量子電容的DFT計算及空位摻雜Sc2CF2 Mxene超級電容器之應用zh_TW
dc.title.alternativeDFT computation of quantum capacitance of transition-metals and vacancy doped Sc2CF2 Mxene for supercapacitor applicationszh_TW
dc.typeUndergracasezh_TW
dc.description.course專題討論zh_TW
dc.contributor.department材料科學與工程學系, 工程與科學學院zh_TW
dc.description.instructor駱, 榮富-
dc.description.programme材料科學與工程學系, 工程與科學學院zh_TW
分類:工科112學年度

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