完整後設資料紀錄
DC 欄位語言
dc.contributor.authorWang, Chua-Chin
dc.contributor.authorHsueh, Ya-Hsin
dc.contributor.authorKuo, Ting-Wan
dc.contributor.authorHu, Ron
dc.date.accessioned2009-08-23T04:41:30Z
dc.date.accessioned2020-05-25T06:39:03Z-
dc.date.available2009-08-23T04:41:30Z
dc.date.available2020-05-25T06:39:03Z-
dc.date.issued2006-10-16T01:34:54Z
dc.date.submitted2002-12-18
dc.identifier.urihttp://dspace.lib.fcu.edu.tw/handle/2377/1296-
dc.description.abstractA novel voltage tripler using 4 clocks with different phases is presented in this work. Both the positive and negative polarities of voltage are generated to serve as the boosted voltage and back bias voltage. The proposed design is carried out by pass transistors and switched capacitors. The largest generated voltage which the proposed design can provide is +11.09 V and -10.62 V given VOD = 3.3 V when the circuit is implemented by TSMC 0.35 u 1P4M CMOS technology.
dc.description.sponsorship東華大學,花蓮縣
dc.format.extent14p.
dc.format.extent627220 bytes
dc.format.mimetypeapplication/pdf
dc.language.isozh_TW
dc.relation.ispartofseries2002 ICS會議
dc.subjectBVG
dc.subjectmemory devices
dc.subjectBBG
dc.subjectprogramming voltage
dc.subjectboosted voltage generator
dc.subjectback bias generator
dc.subject.otherComputer Systems
dc.titleA Boosted Wordline Voltage Generator for Embedded Low-Voltage Memories
分類:2002年 ICS 國際計算機會議

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