完整後設資料紀錄
DC 欄位語言
dc.contributor.authorWang, Chua-Chin
dc.contributor.authorChen, Tian-Hwa
dc.contributor.authorHu, Ron
dc.date.accessioned2009-08-23T04:41:15Z
dc.date.accessioned2020-05-25T06:37:50Z-
dc.date.available2009-08-23T04:41:15Z
dc.date.available2020-05-25T06:37:50Z-
dc.date.issued2006-10-16T01:54:15Z
dc.date.submitted2002-12-18
dc.identifier.urihttp://dspace.lib.fcu.edu.tw/handle/2377/1368-
dc.description.abstractA nobel voltage generator using 4 clocks with two different phase is presented in this work to provide a high voltage supply required by FLASH memories during programming mode and erase mode operations. Both the positive and negative polarities of the voltage are generated to serve as the programming voltage and the erase voltage, respectively. The proposed design is carried out by gated pass transistors and switched capacitors. The regulated generated voltages which the proposed desogn can provide is +11.7V and -11.6V given VOD = 2.5V when the circuit is implemented by TSMC 0.25 um 1P5M CMOS technology. The maximum power dissipation is estimated to be 3.8 mW given 12.5 MHz clocks.
dc.description.sponsorship東華大學,花蓮縣
dc.format.extent13p.
dc.format.extent248791 bytes
dc.format.mimetypeapplication/pdf
dc.language.isozh_TW
dc.relation.ispartofseries2002 ICS會議
dc.subjectFLASH
dc.subjecthigh voltage generator
dc.subjectBVG
dc.subjecttwo-phase clocking
dc.subjectswitched capacitor
dc.subjectmemory wordline
dc.subject.otherComputer Systems
dc.titleA Dual-Polarity High Voltage Generator for FLASH Memories Using Two-Phase Clocking
分類:2002年 ICS 國際計算機會議

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