氧化石墨烯電阻式記憶體之電性量測分析探討:高低電阻轉換機制研究

Abstract

電阻式記憶體在最近的非揮發式記憶體中發展快速，這種記憶體具有高操作速度、低功耗及結構簡單的等等優點，猜測電阻式記憶體為未來主流之一。而電阻式記憶體目前最大的問題在於轉換機制不夠成熟，我們的專題主要是以Al/GO(graphene oxide)/Al的材料來探討電阻式記憶體的轉換機制，我們以很新的材料GO做為介電層，透過文獻探討與實驗量測發現介電層為GO具有良好的高低阻態比、耐久度與製程容易，在經過電流-電壓測量結果的到VRESET=0.5V/VSET=2.3V的低操作電壓，希望以GO這種新材料提高RRAM的特性。 使用的石墨烯氧化物的電阻式記憶體曾經測量超過100次以上，在I-V圖中高低阻態比(HRS/LRS)可為兩個數量級(order)，我們使用與其他人不同使用C-V圖來做另外探討RRAM的電阻轉換特性圖，當希望能用其他角度來看出這種記憶體的轉換機制。由實驗結果的I-V與C-V量測得知，可能是利用電子與氧官能基團的結合使路徑的斷裂，盡而使傳導路徑斷裂造成高低阻態的結果，而石墨烯氧化物具有良好的可撓性與高透光性，應用於軟性透明電子元件也是指日可待的。

Recently, RRAM development fast in the non-volatile memory, this memory has a high operating speed, low power consumption and simple structure and so on merit, guess one of the mainstream will be RRAM . The RRAM’s biggest problem is that the conversion mechanism is not mature enough, our main topic is Al/GO(graphene oxide)/Al materials to explore the switching mechanism of RRAM, we use a new material GO to be dielectric layer, through literature and experimental measurements found that the dielectric layer GO has a higher resistance ratio (HRS/LRS), retention and simple process step, after the current - voltage measurements to VRESET/ VSET = 0.5V/2.3V for low operating voltage, we conclude this GO material could improve the characteristics of RRAM. Graphene-oxide RRAM has a switching time more than 100 times, from the experiment results of the I-V plot in the high and low resistance state ratio (HRS / LRS) is around two orders of magnitude (order). We use the novel methods to observe the performance of GO-RRAM using the C-V measurement, and to investigate the switching mechanism of the GO RRAM memory. Based on the results of I-V and C-V measurements, we could get the experimental results. The combination of the electron and oxygen groups let the resistance switch by the filament breaking, and the graphene oxide has good flexibility and high transmittance, the transparent flexible electronic will be applied in future.