完整後設資料紀錄
DC 欄位語言
dc.contributor.author何秋聖
dc.contributor.author呂典陽
dc.contributor.author林正哲
dc.date94學年度
dc.date第一學期
dc.date.accessioned2009-06-03T03:19:17Z
dc.date.accessioned2020-05-22T08:32:17Z-
dc.date.available2009-06-03T03:19:17Z
dc.date.available2020-05-22T08:32:17Z-
dc.date.issued2007-11-06T02:02:32Z
dc.identifier.otherD9150121
dc.identifier.urihttp://dspace.lib.fcu.edu.tw/handle/2377/549-
dc.description.abstract在微波通信與個人行動通信無線網路系統蓬勃發展潮流 激勵下,微波積體電路技術與高性能多功能高速元件,已廣 泛地成為學術研發與產業需求之研究焦點。尤其單晶微波積 體電路(MMIC)設計方面,高電子遷移率電晶體(HEMT)應用 範圍大幅成長,逐漸成為射頻積體電路(RFIC)元件之關鍵技 術。 在這篇報告中,我們將要報告高電子遷移率電晶體 (HEMT)發展歷程與結構特性,應用在小訊號等效電路模型的 建立上。HEMT 最大的優點就是擁有高電荷密度的二維電子 雲及高速度的載子遷移率。由於HEMT 擁有高電子遷移率, 使得該元件的轉導值非常高,且也可改善元件的高頻特性, 所以HEMT 應用在行動電話及衛星通訊技術及軍事方面有 很大的幫助。 無線通訊技術產品是由許多被動電路所組成的高速半導 體元件。應用在無線通訊最主要的就是改善高頻特性,因此 萃取高頻參數,對於射頻積體電路模型的建立是很重要的關 鍵。 我們知道小訊號等效電路對於場效電晶體的特性分析, 如:增益、雜訊…等,是非常有幫助的,在設計微波電路及 元件的製程。我們將量測到的小訊號等效電路中元件的數 值,帶入軟體並且建立元件模型,接著調變數值使得我們所 模擬出的參數值與實際值接近,就可以成功萃取出真實的元 件數值。得到我們想要的結果並完成該報告。
dc.description.abstractWith wireless communication systems moving toward larger user capacity and higher data rate and the demand for high-frequency, thus the high-performance devices are increasing on a global scale. The high-speed microwave device manufacturers for global trade are important. This category includes Metal-Semiconductor Field-Effect Transistor (MESFET), High Electron Mobility Transistor (HEMT), and Heterojunction Bipolar transistor (HBT), etc... In this term paper, we will report the HEMT historical evolution, structures, applications and high-frequency model build-up. The material properties that have the greatest impact on the high-speed performance of HEMTS are the high sheet charge density in the two-dimensional electron gas (2DEG) and the superior electron velocity. Since HEMT has high-speed electron mobility, it can result in higher transconductance (gm) and improved high-frequency characteristics. So the demands for the HEMT applied to the cell-phone, satellite communication and military have been growing tremendously. Various kinds of wireless communication technological products are formed by lots of various passive circuits, composed of high-speed semiconductor devices. The device high-frequency characteristics are essential in improving quality of the wireless communication products. Therefore, the extraction of the high-frequency parameters is the key point for the RF model build-up. Knowledge of the small-signal equivalent circuit of a field-effect transistor is very useful for the device performance analysis (gain, noise, etc.) in designing microwave circuits and characterizing the device processing. Usually, the small-signal equivalent circuit is obtained by optimizing the component values to closely fit the device measurement results of the small-signal microwave scattering parameters. Consequently, this is the main motive for working on this term project.
dc.format.extent111
dc.format.extent2099201 bytes
dc.format.extent1832 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypetext/plain
dc.language中文
dc.language.isozh_TW
dc.rights開放檢索瀏覽下載
dc.subjectHEMT
dc.subject高頻
dc.subject參數萃取
dc.subject小訊號等效電路
dc.title高電子遷移率電晶體高頻參數萃取與微波模型建立
dc.type大學生專題報告
dc.description.course化合物半導體元件
dc.contributor.department電子工程學系,資訊電機學院
dc.description.instructor李景松
dc.description.programme資訊電機學院
dc.description.programme電子工程學系電子元件四
分類:資電094學年度

文件中的檔案:
檔案 描述 大小格式 
D9150121200501.pdf2.05 MBAdobe PDF檢視/開啟


在 DSpace 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。