1. Feng Chia University Institutional Repository

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題名作者日期
Capacitance-Voltage (C-V) Characteristics of Ferroelectric HfZrO2 Film Deposited on N+/P-Substrate with Microwave Thermal Annealing林成利10-24-19
Characteristics and Performance of Nanosheet Junctionless Field Effect Transistors (NS-JLFETs) with Ferroelectric HfZrO2 Gate Dielectric林成利04-26-19
Characteristics of Nano HfO2/SiN Gate Stack Junctionless Poly-Si FET for Non-volatile Memory Application林成利10-24-19
Effects of Plasma Pre-treatment and Thermal Annealing on Ferroelectric Characteristics of Hf0.5Zr0.5O2 on MFIS Structure林成利04-26-19
Electrical and Ferroelectric Characteristics of HfZrO2 Capped with Thin HfON Films on MFIS Structure for Future Nanoscale FET Application林成利04-26-19
First Demonstration of CMOS Inverter and 6T-SRAM Based on GAA CFETs Structure for 3D-IC Applications林成利12-07-19
氧化釔鉿(HfYO)薄膜之閘極鐵電負電容製程開發與特性研究林成利-
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